TSM60NB190CM2 RNG
TSM60NB190CM2 RNG
Part Number TSM60NB190CM2 RNG Description MOSFET N-CH 600V 18A TO263 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263ABUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 18A (Tc) 150.6W (Tc) Surface Mount TO-263 (D²Pak)
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TSM60NB190CM2 RNG - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TSM60NB190CM2 Standard Package 1 Manufacturer Taiwan Semiconductor Corporation Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 190mOhm @ 6A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1273pF @ 100V FET Feature - Power Dissipation (Max) 150.6W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (D²Pak) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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